TK13E25D,S1X(S

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Mfr.Part #
TK13E25D,S1X(S
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 13A TO220-3
Stock
66,093
In Stock :
66,093

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
Rds On (Max) @ Id, Vgs :
250m Ω @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Mount :
Through Hole
Packaging :
Tube
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
20 ns
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Vgs (Max) :
±20V
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Drain to Source Voltage (Vdss) :
250V
Published :
2009
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
102W Tc
Vgs(th) (Max) @ Id :
3.5V @ 1mA
Continuous Drain Current (ID) :
13A
Rise Time :
40ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Radiation Hardening :
No
Datasheets
TK13E25D,S1X(S
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13E25D,S1X(S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3, TK13E25D,S1X(S pinout, TK13E25D,S1X(S datasheet PDF, TK13E25D,S1X(S amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13E25D,S1X(S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK13E25D,S1X(S


N-Channel Tube 250m Ω @ 6.5A, 10V ±20V 1100pF @ 100V 25nC @ 10V 250V TO-220-3

TK13E25D,S1X(S Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1100pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TK13E25D,S1X(S Features


a continuous drain current (ID) of 13A
a 250V drain to source voltage (Vdss)


TK13E25D,S1X(S Applications


There are a lot of Toshiba Semiconductor and Storage
TK13E25D,S1X(S applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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