TK13A55DA(STA4,QM)

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Mfr.Part #
TK13A55DA(STA4,QM)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 550V 12.5A TO220SIS
Stock
41,566
In Stock :
41,566

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate to Source Voltage (Vgs) :
30V
Rise Time :
40ns
Operating Temperature :
150°C TJ
Published :
2011
Factory Lead Time :
16 Weeks
FET Type :
N-Channel
Mounting Type :
Through Hole
Number of Pins :
3
Power Dissipation-Max :
45W Tc
RoHS Status :
RoHS Compliant
Series :
π-MOSVII
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Fall Time (Typ) :
15 ns
Package / Case :
TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Drain to Source Voltage (Vdss) :
550V
Rds On (Max) @ Id, Vgs :
480m Ω @ 6.3A, 10V
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
12.5A Ta
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
12.5A
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13A55DA(STA4,QM) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3 Full Pack, TK13A55DA(STA4,QM) pinout, TK13A55DA(STA4,QM) datasheet PDF, TK13A55DA(STA4,QM) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13A55DA(STA4,QM) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK13A55DA(STA4,QM)


N-Channel Tube 480m Ω @ 6.3A, 10V ±30V 1800pF @ 25V 38nC @ 10V 550V TO-220-3 Full Pack

TK13A55DA(STA4,QM) Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 550V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TK13A55DA(STA4,QM) Features


a continuous drain current (ID) of 12.5A
a 550V drain to source voltage (Vdss)


TK13A55DA(STA4,QM) Applications


There are a lot of Toshiba Semiconductor and Storage
TK13A55DA(STA4,QM) applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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