TK13A45D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

22ns

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Vgs (Max) :

±30V

Radiation Hardening :

No

Series :

π-MOSVII

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Packaging :

Tube

Power Dissipation-Max :

45W Tc

Continuous Drain Current (ID) :

13A

Published :

2009

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Max Operating Temperature :

150°C

Rds On Max :

460 mΩ

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Operating Temperature :

150°C TJ

Supplier Device Package :

TO-220SIS

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

15 ns

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

460mOhm @ 6.5A, 10V

Input Capacitance :

1.35nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

450V