TK13A60D(STA4,Q,M)

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Mfr.Part #
TK13A60D(STA4,Q,M)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 13A TO220SIS
Stock
5,204
In Stock :
5,204

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
50W
Fall Time (Typ) :
25 ns
Drain to Source Voltage (Vdss) :
600V
Factory Lead Time :
16 Weeks
Continuous Drain Current (ID) :
13A
Radiation Hardening :
No
Number of Pins :
3
Series :
π-MOSVII
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Package / Case :
TO-220-3 Full Pack
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Mount :
Through Hole
Operating Temperature :
150°C TJ
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Mounting Type :
Through Hole
Min Operating Temperature :
-55°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
430mOhm @ 6.5A, 10V
Supplier Device Package :
TO-220SIS
Input Capacitance :
2.3nF
Vgs(th) (Max) @ Id :
4V @ 1mA
Rise Time :
50ns
Rds On Max :
430 mΩ
Power Dissipation-Max :
50W Tc
Published :
1997
RoHS Status :
RoHS Compliant
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13A60D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, Mounting Type:Through Hole, TK13A60D(STA4,Q,M) pinout, TK13A60D(STA4,Q,M) datasheet PDF, TK13A60D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13A60D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK13A60D(STA4,Q,M)


N-Channel Tube 430mOhm @ 6.5A, 10V ±30V 2300pF @ 25V 40nC @ 10V 600V TO-220-3 Full Pack

TK13A60D(STA4,Q,M) Overview


The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK13A60D(STA4,Q,M) Features


a continuous drain current (ID) of 13A
a 600V drain to source voltage (Vdss)


TK13A60D(STA4,Q,M) Applications


There are a lot of Toshiba Semiconductor and Storage
TK13A60D(STA4,Q,M) applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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