TK13A60D(STA4,Q,M)

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Mfr.Part #
TK13A60D(STA4,Q,M)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 13A TO220SIS
Stock
5,204
In Stock :
5,204

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Number of Pins :
3
Power Dissipation :
50W
Min Operating Temperature :
-55°C
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Packaging :
Tube
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
1997
Rds On (Max) @ Id, Vgs :
430mOhm @ 6.5A, 10V
Package / Case :
TO-220-3 Full Pack
Input Capacitance :
2.3nF
Rds On Max :
430 mΩ
Radiation Hardening :
No
Continuous Drain Current (ID) :
13A
Number of Elements :
1
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Gate to Source Voltage (Vgs) :
30V
Factory Lead Time :
16 Weeks
Supplier Device Package :
TO-220SIS
Series :
π-MOSVII
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
FET Type :
N-Channel
Power Dissipation-Max :
50W Tc
Rise Time :
50ns
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
600V
Fall Time (Typ) :
25 ns
Operating Temperature :
150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13A60D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, TK13A60D(STA4,Q,M) pinout, TK13A60D(STA4,Q,M) datasheet PDF, TK13A60D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK13A60D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK13A60D(STA4,Q,M)


N-Channel Tube 430mOhm @ 6.5A, 10V ±30V 2300pF @ 25V 40nC @ 10V 600V TO-220-3 Full Pack

TK13A60D(STA4,Q,M) Overview


The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK13A60D(STA4,Q,M) Features


a continuous drain current (ID) of 13A
a 600V drain to source voltage (Vdss)


TK13A60D(STA4,Q,M) Applications


There are a lot of Toshiba Semiconductor and Storage
TK13A60D(STA4,Q,M) applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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