TK13A60D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

50W

Fall Time (Typ) :

25 ns

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

13A

Radiation Hardening :

No

Number of Pins :

3

Series :

π-MOSVII

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Mount :

Through Hole

Operating Temperature :

150°C TJ

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

430mOhm @ 6.5A, 10V

Supplier Device Package :

TO-220SIS

Input Capacitance :

2.3nF

Vgs(th) (Max) @ Id :

4V @ 1mA

Rise Time :

50ns

Rds On Max :

430 mΩ

Power Dissipation-Max :

50W Tc

Published :

1997

RoHS Status :

RoHS Compliant