TK13A65U(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

40W

Radiation Hardening :

No

Series :

DTMOSII

Max Operating Temperature :

150°C

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1mA

Fall Time (Typ) :

8 ns

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 10V

Input Capacitance :

950pF

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Min Operating Temperature :

-55°C

Mount :

Through Hole

Mounting Type :

Through Hole

Rise Time :

30ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

Number of Elements :

1

Published :

2009

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

380mOhm @ 6.5A, 10V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

40W Tc

Continuous Drain Current (ID) :

13A

Rds On Max :

380 mΩ

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Supplier Device Package :

TO-220SIS