TK11A65W,S5X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

35W Tc

Supplier Device Package :

TO-220SIS

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Pins :

3

Published :

2014

Fall Time (Typ) :

5.5 ns

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

390 mΩ

Drain to Source Resistance :

330mOhm

FET Type :

N-Channel

Turn On Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 300V

Series :

DTMOSIV

Mount :

Through Hole

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

11.1A

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

6.000006g

Current - Continuous Drain (Id) @ 25°C :

11.1A Ta

Gate to Source Voltage (Vgs) :

30V

Rise Time :

23ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3.5V @ 450μA

Drain to Source Voltage (Vdss) :

650V

Operating Temperature :

150°C TJ

Package / Case :

TO-220-3 Full Pack

Drain to Source Breakdown Voltage :

650V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

390mOhm @ 5.5A, 10V

Turn-Off Delay Time :

85 ns

Packaging :

Tube

Number of Channels :

1

Input Capacitance :

890pF

RoHS Status :

RoHS Compliant