TK110E65Z,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Power Dissipation (Max) :

190W (Tc)

Operating Temperature :

150°C

Minimum Operating Temperature :

- 55 C

FET Feature :

-

Package / Case :

TO-220-3

Package :

Tube

Manufacturer :

Toshiba

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Packaging :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1.02mA

Mounting Type :

Through Hole

RoHS :

Details

Supplier Device Package :

TO-220

Drain to Source Voltage (Vdss) :

650 V

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 300 V

Brand :

Toshiba

Current - Continuous Drain (Id) @ 25°C :

24A (Ta)

Rds On (Max) @ Id, Vgs :

110mOhm @ 12A, 10V

Series :

-

Vgs (Max) :

±30V

Product Category :

Toshiba