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  5. TK11A50D(STA4,Q,M)
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    TK11A50D(STA4,Q,M)

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    Mfr.Part #
    TK11A50D(STA4,Q,M)
    Manufacturer
    Toshiba Electronic Devices and Storage Corporation
    Package / Case
    TO-220-3 Full Pack
    Datasheet
    Download
    Description
    MOSFET N-CH 500V 11A TO220SIS
    Stock
    4,364
    In Stock ：
    4,364

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    Manufacturer :
    Toshiba Electronic Devices and Storage Corporation
    Product Category :
    Transistors - FETs, MOSFETs - Single
    Vgs(th) (Max) @ Id :
    4V @ 1mA
    Drive Voltage (Max Rds On,Min Rds On) :
    10V
    Radiation Hardening :
    No
    RoHS Status :
    RoHS Compliant
    Continuous Drain Current (ID) :
    11A
    Drain to Source Voltage (Vdss) :
    500V
    Current - Continuous Drain (Id) @ 25°C :
    11A Ta
    Power Dissipation-Max :
    45W Tc
    Operating Temperature :
    150°C TJ
    Mounting Type :
    Through Hole
    Fall Time (Typ) :
    12 ns
    Factory Lead Time :
    16 Weeks
    Series :
    π-MOSVII
    Input Capacitance (Ciss) (Max) @ Vds :
    1200pF @ 25V
    Mount :
    Through Hole
    Vgs (Max) :
    ±30V
    Rds On (Max) @ Id, Vgs :
    600m Ω @ 5.5A, 10V
    Packaging :
    Tube
    FET Type :
    N-Channel
    Gate Charge (Qg) (Max) @ Vgs :
    24nC @ 10V
    Gate to Source Voltage (Vgs) :
    30V
    Published :
    2009
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Rise Time :
    25ns
    Number of Pins :
    3
    Package / Case :
    TO-220-3 Full Pack
    Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK11A50D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature：150°C TJ, Mounting Type：Through Hole, Number of Pins：3, Package / Case：TO-220-3 Full Pack, TK11A50D(STA4,Q,M) pinout, TK11A50D(STA4,Q,M) datasheet PDF, TK11A50D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK11A50D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

    Toshiba Electronic Devices and Storage Corporation TK11A50D(STA4,Q,M)


    N-Channel Tube 600m Ω @ 5.5A, 10V ±30V 1200pF @ 25V 24nC @ 10V 500V TO-220-3 Full Pack

    TK11A50D(STA4,Q,M) Overview


    An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

    TK11A50D(STA4,Q,M) Features


    a continuous drain current (ID) of 11A
    a 500V drain to source voltage (Vdss)


    TK11A50D(STA4,Q,M) Applications


    There are a lot of Toshiba Semiconductor and Storage
    TK11A50D(STA4,Q,M) applications of single MOSFETs transistors.


    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
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