TK110A65Z,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Vgs (Max) :

±30V

RoHS :

Details

Transistor Type :

1 N-Channel

Product Status :

Active

Package / Case :

TO-220-3 Full Pack

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

650 V

Number of Channels :

1 Channel

Product Type :

MOSFET

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Series :

DTMOSVI

Package :

Tube

Operating Temperature :

150°C

Brand :

Toshiba

Power Dissipation (Max) :

45W (Tc)

Configuration :

Single

Mounting Type :

Through Hole

FET Type :

N-Channel

Product Category :

MOSFET

Base Product Number :

TK110A65

Supplier Device Package :

TO-220SIS

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 300 V

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1.02mA

Manufacturer :

Toshiba

Current - Continuous Drain (Id) @ 25°C :

24A (Ta)

Rds On (Max) @ Id, Vgs :

110mOhm @ 12A, 10V

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Rise Time :

28 ns

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V