TK11A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Fall Time (Typ) :

15 ns

Rds On Max :

630 mΩ

Continuous Drain Current (ID) :

11A

Published :

2009

Rise Time :

22ns

Number of Pins :

3

Input Capacitance :

1.35nF

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Series :

π-MOSVII

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Voltage (Vdss) :

550V

RoHS Status :

RoHS Compliant

Factory Lead Time :

16 Weeks

Packaging :

Tube

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

630mOhm @ 5.5A, 10V

Power Dissipation-Max :

45W Tc

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Mount :

Through Hole

Supplier Device Package :

TO-220SIS

Package / Case :

TO-220-3 Full Pack