TK110N65Z,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Power Dissipation (Max) :

190W (Tc)

Product Type :

MOSFET

FET Type :

N-Channel

Product Status :

Active

FET Feature :

-

Transistor Polarity :

N-Channel

RoHS :

Details

Subcategory :

MOSFETs

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 300 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-247

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

24A (Ta)

Mounting Type :

Through Hole

Brand :

Toshiba

Vgs(th) (Max) @ Id :

4V @ 1.02mA

Package :

Tube

Mounting Style :

Through Hole

Technology :

Si

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Series :

DTMOS VI

Rise Time :

35 ns

Rds On (Max) @ Id, Vgs :

110mOhm @ 12A, 10V

Channel Mode :

Enhancement

Operating Temperature :

150°C

Package / Case :

TO-247-3

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Manufacturer :

Toshiba

Packaging :

Tube

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

650 V