TK110Z65Z,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

190W (Tc)

Brand :

Toshiba

Vgs(th) (Max) @ Id :

4V @ 1.02mA

Drain to Source Voltage (Vdss) :

650 V

Vgs (Max) :

±30V

Product Status :

Active

Packaging :

Tube

Mounting Type :

Through Hole

Operating Temperature :

150°C

Supplier Device Package :

TO-247-4L(T)

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

110mOhm @ 12A, 10V

Channel Mode :

Enhancement

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

24A (Ta)

Manufacturer :

Toshiba

Series :

DTMOSVI

Configuration :

Single

FET Feature :

-

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Style :

Through Hole

Package / Case :

TO-247-4

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 300 V

Subcategory :

MOSFETs

Product Category :

MOSFET

Rise Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Package :

Tube