TK11A60D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Published :

2009

Power Dissipation-Max :

45W Tc

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.5A, 10V

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Series :

π-MOSVII

Mount :

Through Hole

Fall Time (Typ) :

15 ns

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Mounting Type :

Through Hole

Rise Time :

25ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

11A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V