TCS1200

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

RoHS Compliant

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

1.03GHz

Qualification Status :

Not Qualified

Terminal Form :

Flat

Mount :

Chassis Mount

Case Connection :

Base

Transistor Type :

NPN

Highest Frequency Band :

L B

Number of Terminations :

2

Number of Elements :

1

Max Power Dissipation :

2.095kW

Terminal Finish :

TIN LEAD

Factory Lead Time :

32 Weeks

Polarity/Channel Type :

NPN

Operating Temperature :

200°C TJ

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

65V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Mounting Type :

Chassis Mount

Power - Max :

2095W

Transistor Element Material :

SILICON

Gain :

10.2dBd

Package / Case :

55TU-1

Current - Collector (Ic) (Max) :

60A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Terminal Position :

Dual

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

60A

JESD-609 Code :

e0

JESD-30 Code :

R-XDFM-F2

Pbfree Code :

No

Pin Count :

3