SUP85N15-21-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

40 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Length :

10.41mm

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Element Configuration :

Single

Nominal Vgs :

2 V

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

170ns

Weight :

6.000006g

Published :

2001

Radiation Hardening :

No

Fall Time (Typ) :

170 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

21m Ω @ 30A, 10V

JEDEC-95 Code :

TO-220AB

Series :

TrenchFET®

Factory Lead Time :

14 Weeks

Pin Count :

3

Power Dissipation :

300W

Height :

9.01mm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.4W Ta 300W Tc

Width :

4.7mm

Drain to Source Breakdown Voltage :

150V

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 25V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Case Connection :

DRAIN

Vgs (Max) :

±20V

Mount :

Through Hole

Mounting Type :

Through Hole

Number of Pins :

3

Voltage - Rated DC :

150V

REACH SVHC :

Unknown

Pbfree Code :

yes

JESD-609 Code :

e3

Turn On Delay Time :

22 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

85A

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant