SUP80090E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Vgs (Max) :

±20V

Number of Terminations :

3

Published :

2016

Pulsed Drain Current-Max (IDM) :

240A

Number of Pins :

3

Series :

ThunderFET®

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 30A, 10V

Number of Elements :

1

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.011Ohm

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

3425pF @ 75V

Terminal Position :

Single

Packaging :

Tube

Avalanche Energy Rating (Eas) :

180 mJ

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

150V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

128A Tc

Continuous Drain Current (ID) :

128A

FET Type :

N-Channel

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

150V

Transistor Application :

SWITCHING

Power Dissipation-Max :

375W Tc

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks