SUP85N03-3M6P-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 22A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

3.1W

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

3.1W Ta 78.1W Tc

Package / Case :

TO-220-3

Published :

2001

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

3535pF @ 15V

Transistor Element Material :

SILICON

Pin Count :

3

REACH SVHC :

No SVHC

Number of Elements :

1

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Mounting Type :

Through Hole

Element Configuration :

Single

Rise Time :

10ns

Packaging :

Tube

Turn-Off Delay Time :

35 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

85A

Turn On Delay Time :

11 ns

Number of Pins :

3

Number of Channels :

1

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1V

Current - Continuous Drain (Id) @ 25°C :

85A Tc