SUP85N10-10-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Number of Channels :

1

Factory Lead Time :

14 Weeks

Width :

4.7mm

Threshold Voltage :

3V

Power Dissipation :

250W

Lead Free :

Lead Free

JESD-609 Code :

e3

Package / Case :

TO-220-3

Element Configuration :

Single

Series :

TrenchFET®

Number of Terminations :

3

Length :

10.41mm

Avalanche Energy Rating (Eas) :

280 mJ

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Fall Time (Typ) :

130 ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

240A

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Weight :

6.000006g

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Published :

2016

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Case Connection :

DRAIN

Rise Time :

90ns

Mounting Type :

Through Hole

Height :

9.01mm

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6550pF @ 25V

Power Dissipation-Max :

3.75W Ta 250W Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mount :

Through Hole

Nominal Vgs :

3 V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 30A, 10V

Continuous Drain Current (ID) :

85A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

12 ns

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

55 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Resistance :

10.5mOhm

Packaging :

Tube