SUP85N02-03-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Series :

TrenchFET®

Continuous Drain Current (ID) :

85A

Case Connection :

DRAIN

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

450mV @ 2mA (Min)

Published :

2009

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

21250pF @ 20V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Fall Time (Typ) :

320 ns

JESD-609 Code :

e3

Turn-Off Delay Time :

450 ns

Power Dissipation-Max :

250W Tc

Nominal Vgs :

450 mV

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 4.5V

Mount :

Through Hole

Power Dissipation :

250W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

8V

Pin Count :

3

Number of Elements :

1

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Rise Time :

200ns

Radiation Hardening :

No

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

450mV

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

3m Ω @ 30A, 4.5V

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

240A

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE