SUP85N04-03-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

85A

Pulsed Drain Current-Max (IDM) :

240A

Published :

2009

Rise Time :

90ns

Turn On Delay Time :

15 ns

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 30A, 10V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Power Dissipation :

250W

Series :

TrenchFET®

Transistor Element Material :

SILICON

Mount :

Through Hole

Power Dissipation-Max :

3.75W Ta 250W Tc

Fall Time (Typ) :

125 ns

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

95 ns

Pin Count :

3

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pbfree Code :

yes