SUP45P03-09-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

45A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Power Dissipation-Max :

73.5W Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.0087Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

61 mJ

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 20A, 10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 15V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

100A

Current - Continuous Drain (Id) @ 25°C :

45A Tc