SUP40N10-30-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

30m Ω @ 15A, 10V

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-220-3

Number of Pins :

3

Turn-Off Delay Time :

30 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Power Dissipation-Max :

3.75W Ta 107W Tc

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Turn On Delay Time :

11 ns

Fall Time (Typ) :

12 ns

Resistance :

30mOhm

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Continuous Drain Current (ID) :

40A

Packaging :

Tube

Series :

TrenchFET®

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Rise Time :

12ns

Pulsed Drain Current-Max (IDM) :

75A

Published :

2009

Power Dissipation :

3.75W

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

FET Type :

N-Channel