SUP40N10-30-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

ECCN Code :

EAR99

Pin Count :

3

Power Dissipation-Max :

3.1W Ta 89W Tc

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

11 ns

Series :

TrenchFET®

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

38.5A Tc

Avalanche Energy Rating (Eas) :

61 mJ

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Turn-Off Delay Time :

30 ns

Published :

2009

Fall Time (Typ) :

12 ns

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Rise Time :

12ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

75A

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

30m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

38.5A