SUP40N25-60-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.41mm

Fall Time (Typ) :

145 ns

Number of Terminations :

3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

40 ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 20A, 10V

Number of Pins :

3

Pbfree Code :

yes

Width :

4.7mm

Package / Case :

TO-220-3

Turn On Delay Time :

22 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

250V

Series :

TrenchFET®

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Published :

2008

Pulsed Drain Current-Max (IDM) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Weight :

6.000006g

Drain-source On Resistance-Max :

0.06Ohm

Vgs (Max) :

±30V

JESD-609 Code :

e3

ECCN Code :

EAR99

Height :

9.01mm

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Continuous Drain Current (ID) :

40A

Rise Time :

220ns

Power Dissipation :

3.75W

Current - Continuous Drain (Id) @ 25°C :

40A Tc

FET Type :

N-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

3.75W Ta 300W Tc

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Through Hole

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V