SUP40P10-43-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Power Dissipation-Max :

2W Ta 125W Tc

Mount :

Through Hole

Packaging :

Tape and Reel (TR)

Published :

2011

Power Dissipation :

2W

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

43m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

36A Tc

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 50V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

36A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Series :

TrenchFET®

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

40A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole