SUP40010EL-GE3

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Mfr.Part #
SUP40010EL-GE3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 120A TO220AB
Stock
8,892
In Stock :
8,892

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Packaging :
Tube
Series :
ThunderFET®
Avalanche Energy Rating (Eas) :
320 mJ
Drain Current-Max (Abs) (ID) :
120A
Terminal Position :
Single
Factory Lead Time :
14 Weeks
Package / Case :
TO-220-3
Rds On (Max) @ Id, Vgs :
1.8m Ω @ 30A, 10V
Number of Terminations :
3
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
300A
Drain-source On Resistance-Max :
0.0018Ohm
FET Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Drain to Source Voltage (Vdss) :
40V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Power Dissipation-Max :
375W Tc
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 10V
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-220AB
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
40V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
11155pF @ 30V
Datasheets
SUP40010EL-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SUP40010EL-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, SUP40010EL-GE3 pinout, SUP40010EL-GE3 datasheet PDF, SUP40010EL-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SUP40010EL-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SUP40010EL-GE3


N-Channel Tube 1.8m Ω @ 30A, 10V ±20V 11155pF @ 30V 230nC @ 10V 40V TO-220-3

SUP40010EL-GE3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 320 mJ.A device's maximum input capacitance is 11155pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 120A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SUP40010EL-GE3 Features


the avalanche energy rating (Eas) is 320 mJ
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


SUP40010EL-GE3 Applications


There are a lot of Vishay Siliconix
SUP40010EL-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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