STW45NM60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Current Rating :

45A

JESD-609 Code :

e3

Continuous Drain Current (ID) :

45A

Packaging :

Tube

Height :

20.15mm

Base Part Number :

STW45N

Turn On Delay Time :

30 ns

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

850 mJ

Element Configuration :

Single

JEDEC-95 Code :

TO-247AC

Power Dissipation-Max :

417W Tc

Length :

15.75mm

Gate to Source Voltage (Vgs) :

30V

Width :

5.15mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

650V

Rise Time :

20ns

Fall Time (Typ) :

23 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

Number of Terminations :

3

Power Dissipation :

417W

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

600V

Weight :

9.071847g

Resistance :

110mOhm

Drain to Source Breakdown Voltage :

600V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

16 Weeks

Number of Pins :

3

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Threshold Voltage :

4V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Series :

MDmesh™

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

110m Ω @ 22.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

134nC @ 10V