STW40N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

88m Ω @ 17A, 10V

Series :

MDmesh™ II Plus

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.088Ohm

FET Type :

N-Channel

Number of Channels :

1

ECCN Code :

EAR99

Packaging :

Tube

Weight :

38.000013g

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

500 mJ

Element Configuration :

Single

Radiation Hardening :

No

Number of Pins :

3

DS Breakdown Voltage-Min :

600V

Mount :

Through Hole

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn-Off Delay Time :

96 ns

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 100V

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

34A

Number of Elements :

1

Fall Time (Typ) :

11 ns

Base Part Number :

STW40N

Turn On Delay Time :

20.5 ns

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±25V

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Rise Time :

13.5ns

Power Dissipation-Max :

250W Tc