STW42N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

190W Tc

Fall Time (Typ) :

13 ns

Number of Channels :

1

Package / Case :

TO-247-3

Pin Count :

3

Mount :

Through Hole

FET Type :

N-Channel

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Turn-Off Delay Time :

65 ns

Gate to Source Voltage (Vgs) :

25V

Width :

5.15mm

Vgs (Max) :

±25V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STW42N

Terminal Finish :

Tin (Sn)

Height :

24.45mm

Number of Terminations :

3

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Element Configuration :

Single

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Series :

MDmesh™ V

Turn On Delay Time :

61 ns

Avalanche Energy Rating (Eas) :

950 mJ

Rds On (Max) @ Id, Vgs :

79m Ω @ 16.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

JESD-609 Code :

e3

Manufacturer Package Identifier :

STW42N65M5

Lead Free :

Lead Free

Rise Time :

24ns

Length :

15.75mm

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

33A

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 100V

Factory Lead Time :

17 Weeks

Resistance :

79mOhm

Power Dissipation :

190W

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mounting Type :

Through Hole