STW40N20
- Mfr.Part #
- STW40N20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 40A TO247-3
- Stock
- 13,960
- In Stock :
- 13,960
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 160W Tc
- Base Part Number :
- STW40N
- Fall Time (Typ) :
- 24 ns
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 230 mJ
- Drain to Source Breakdown Voltage :
- 200V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-247-3
- Voltage - Rated DC :
- 200V
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 40A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 74 ns
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-247AC
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 160W
- Pulsed Drain Current-Max (IDM) :
- 160A
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 20 ns
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 20A, 10V
- Rise Time :
- 44ns
- Drain-source On Resistance-Max :
- 0.045Ohm
- Mount :
- Through Hole
- Series :
- STripFET™
- FET Type :
- N-Channel
- Datasheets
- STW40N20

N-Channel Tube 45m Ω @ 20A, 10V ±20V 2500pF @ 25V 75nC @ 10V TO-247-3
STW40N20 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 230 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 40A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 74 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STW40N20 Features
the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 160A.
STW40N20 Applications
There are a lot of STMicroelectronics
STW40N20 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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