STW43NM60ND
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- Mfr.Part #
- STW43NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 35A TO247-3
- Stock
- 7,490
- In Stock ：
- 7,490
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 255W Tc
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 50V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 17.5A, 10V
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Power Dissipation :
- 255W
- Rise Time :
- 40ns
- Resistance :
- 88mOhm
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Threshold Voltage :
- 4V
- ECCN Code :
- EAR99
- Base Part Number :
- STW43N
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Series :
- FDmesh™
- Height :
- 20.15mm
- Width :
- 5.15mm
- Fall Time (Typ) :
- 50 ns
- Turn On Delay Time :
- 30 ns
- Continuous Drain Current (ID) :
- 35A
- Turn-Off Delay Time :
- 120 ns
- Vgs (Max) :
- ±25V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Packaging :
- Tube
- Length :
- 15.75mm
- Datasheets
- STW43NM60ND
N-Channel Tube 88m Ω @ 17.5A, 10V ±25V 4300pF @ 50V 145nC @ 10V TO-247-3
STW43NM60ND Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 120 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
STW43NM60ND Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 120 ns
a threshold voltage of 4V
STW43NM60ND Applications
There are a lot of STMicroelectronics
STW43NM60ND applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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