STW43NM50N

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Mfr.Part #
STW43NM50N
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 37A TO247-3
Stock
9,236
In Stock :
9,236

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-247-3
Transistor Element Material :
SILICON
Number of Pins :
3
Gate to Source Voltage (Vgs) :
25V
Operating Temperature :
150°C TJ
Turn-Off Delay Time :
140 ns
Continuous Drain Current (ID) :
18.5A
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Fall Time (Typ) :
42 ns
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Through Hole
Rise Time :
20ns
Vgs (Max) :
±25V
Turn On Delay Time :
30 ns
Pin Count :
3
Packaging :
Tube
Resistance :
85mOhm
Radiation Hardening :
No
Number of Terminations :
3
Power Dissipation :
255W
JEDEC-95 Code :
TO-247AC
Power Dissipation-Max :
255W Tc
RoHS Status :
ROHS3 Compliant
Base Part Number :
STW43N
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 50V
Series :
MDmesh™ II
Current - Continuous Drain (Id) @ 25°C :
37A Tc
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
85m Ω @ 18.5A, 10V
Element Configuration :
Single
Number of Elements :
1
Datasheets
STW43NM50N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW43NM50N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:STW43N, STW43NM50N pinout, STW43NM50N datasheet PDF, STW43NM50N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW43NM50N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW43NM50N


N-Channel Tube 85m Ω @ 18.5A, 10V ±25V 4200pF @ 50V 140nC @ 10V TO-247-3

STW43NM50N Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4200pF @ 50V.This device conducts a continuous drain current (ID) of 18.5A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STW43NM50N Features


a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 140 ns


STW43NM50N Applications


There are a lot of STMicroelectronics
STW43NM50N applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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