STW43NM50N
- Mfr.Part #
- STW43NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 37A TO247-3
- Stock
- 9,236
- In Stock :
- 9,236
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 140 ns
- Continuous Drain Current (ID) :
- 18.5A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 42 ns
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Rise Time :
- 20ns
- Vgs (Max) :
- ±25V
- Turn On Delay Time :
- 30 ns
- Pin Count :
- 3
- Packaging :
- Tube
- Resistance :
- 85mOhm
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Power Dissipation :
- 255W
- JEDEC-95 Code :
- TO-247AC
- Power Dissipation-Max :
- 255W Tc
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STW43N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 50V
- Series :
- MDmesh™ II
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 18.5A, 10V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Datasheets
- STW43NM50N

N-Channel Tube 85m Ω @ 18.5A, 10V ±25V 4200pF @ 50V 140nC @ 10V TO-247-3
STW43NM50N Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4200pF @ 50V.This device conducts a continuous drain current (ID) of 18.5A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW43NM50N Features
a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 140 ns
STW43NM50N Applications
There are a lot of STMicroelectronics
STW43NM50N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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