STW19NM65N
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- Mfr.Part #
- STW19NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15.5A TO247-3
- Stock
- 1,056
- In Stock ：
- 1,056
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 7.75A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 150W
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 50V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 650V
- Turn-Off Delay Time :
- 80 ns
- Series :
- MDmesh™ II
- Turn On Delay Time :
- 25 ns
- Transistor Element Material :
- SILICON
- Resistance :
- 270mOhm
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 8ns
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 15.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 15.5A Tc
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 62A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 150W Tc
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 26 ns
- Base Part Number :
- STW19N
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Pin Count :
- 3
- Packaging :
- Tube
- Datasheets
- STW19NM65N
N-Channel Tube 270m Ω @ 7.75A, 10V ±25V 1900pF @ 50V 55nC @ 10V TO-247-3
STW19NM65N Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 15.5A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 62A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW19NM65N Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 15.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 62A.
STW19NM65N Applications
There are a lot of STMicroelectronics
STW19NM65N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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