STW10NK80Z
- Mfr.Part #
- STW10NK80Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 9A TO247-3
- Stock
- 9,520
- In Stock :
- 9,520
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- SuperMESH™
- Fall Time (Typ) :
- 17 ns
- Mount :
- Through Hole
- Length :
- 15.75mm
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 30 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 9A
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Rise Time :
- 20ns
- Width :
- 5.15mm
- Base Part Number :
- STW10N
- Height :
- 20.15mm
- Voltage - Rated DC :
- 800V
- Pin Count :
- 3
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Resistance :
- 900mOhm
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 4.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 160W Tc
- Turn-Off Delay Time :
- 65 ns
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Power Dissipation :
- 160W
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 3.75V
- Current Rating :
- 9A
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 800V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2180pF @ 25V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Datasheets
- STW10NK80Z

N-Channel Tube 900m Ω @ 4.5A, 10V ±30V 2180pF @ 25V 72nC @ 10V TO-247-3
STW10NK80Z Description
The STW10NK80Z is an 800V N-channel Zener-protected Power MOSFET developed using SuperMESH? technology, achieved through optimization of well-established strip-based PowerMESH? layout. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. To fulfill the demanding efficiency requirements of today, improve gate charge and reduce power dissipation.
STW10NK80Z Features
-
100% avalanche tested
-
Gate charge minimized
-
Extremely high dv/dt capability
-
Very low intrinsic capacitances
-
Very good manufacturing repeatability
STW10NK80Z Applications
-
Industrial
-
General-purpose
-
Audio Amplifier
-
Sensor / Detector Applications
-
Radio & RF Applications under 100MHz
-
Audio Recorders
-
Voice Recorders
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