STW11NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Height :

20.15mm

Number of Terminations :

3

ECCN Code :

EAR99

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Additional Feature :

ULTRA-LOW RESISTANCE

JESD-609 Code :

e3

Current Rating :

11A

Voltage - Rated DC :

800V

Power Dissipation :

150W

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tube

Drain to Source Breakdown Voltage :

800V

Gate Charge (Qg) (Max) @ Vgs :

43.6nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

22 ns

Rds On (Max) @ Id, Vgs :

400m Ω @ 5.5A, 10V

Resistance :

400mOhm

Power Dissipation-Max :

150W Tc

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Package / Case :

TO-247-3

Number of Pins :

3

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.75mm

FET Type :

N-Channel

Mounting Type :

Through Hole

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STW11N

Turn-Off Delay Time :

46 ns

Lead Free :

Lead Free

Radiation Hardening :

No

Fall Time (Typ) :

15 ns

Series :

MDmesh™

Rise Time :

17ns

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

44A

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

5.5A

Avalanche Energy Rating (Eas) :

400 mJ

Vgs (Max) :

±30V

Element Configuration :

Single

Width :

5.15mm