STW10NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.75Ohm

Pin Count :

3

Number of Pins :

3

Mount :

Through Hole

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Contact Plating :

Tin

JEDEC-95 Code :

TO-247AC

Fall Time (Typ) :

30 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 25V

Rise Time :

20ns

Height :

20.15mm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Power Dissipation :

156W

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

20 ns

Package / Case :

TO-247-3

Radiation Hardening :

No

Power Dissipation-Max :

156W Tc

Width :

5.15mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

55 ns

Operating Temperature :

-55°C~150°C TJ

Length :

15.75mm

Threshold Voltage :

3.75V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Base Part Number :

STW10N

Number of Elements :

1

Continuous Drain Current (ID) :

10A

Series :

SuperMESH™

Current Rating :

10A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Voltage - Rated DC :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Vgs (Max) :

±30V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

750m Ω @ 4.5A, 10V