STW11NB80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

44A

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Series :

PowerMESH™

Mounting Type :

Through Hole

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

800V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Packaging :

Tube

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

11A Tc

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

500 mJ

Reach Compliance Code :

not_compliant

Current Rating :

11A

ECCN Code :

EAR99

Power Dissipation-Max :

190W Tc

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

800m Ω @ 5.5A, 10V

Base Part Number :

STW11N

Vgs (Max) :

±30V

Power Dissipation :

190W

Lead Free :

Contains Lead

Rise Time :

13ns

Drain to Source Breakdown Voltage :

800V

Drain-source On Resistance-Max :

0.8Ohm

RoHS Status :

Non-RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Number of Elements :

1

Fall Time (Typ) :

23 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

11A