STW11NK90Z
- Mfr.Part #
- STW11NK90Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 9.2A TO247-3
- Stock
- 12,424
- In Stock :
- 12,424
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Packaging :
- Tube
- Turn-Off Delay Time :
- 76 ns
- Fall Time (Typ) :
- 50 ns
- Drain-source On Resistance-Max :
- 0.98Ohm
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STW11N
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Drain to Source Breakdown Voltage :
- 900V
- Rise Time :
- 19ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Series :
- SuperMESH™
- Additional Feature :
- High Voltage
- Threshold Voltage :
- 3.75V
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 200W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-247-3
- Height :
- 20.15mm
- Continuous Drain Current (ID) :
- 9.2A
- Rds On (Max) @ Id, Vgs :
- 980m Ω @ 4.6A, 10V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Power Dissipation :
- 200W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Pin Count :
- 3
- Length :
- 15.75mm
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-247AC
- Turn On Delay Time :
- 30 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5.15mm
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Datasheets
- STW11NK90Z

N-Channel Tube 980m Ω @ 4.6A, 10V ±30V 3000pF @ 25V 115nC @ 10V TO-247-3
STW11NK90Z Description
With a voltage of 900V, the STW11NK90Z is a Zener-protected SuperMESHTM Power MOSFET from STMicroelectronics. It is packaged in the TO-247-3 format. The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage Power MOSFETs, including the groundbreaking MDmeshTM devices, is complemented by this series.
STW11NK90Z Features
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
STW11NK90Z Applications
Switching Application
Power Management
Industrial
DC-DC Conversion
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