STW19NM60N
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- Mfr.Part #
- STW19NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A TO247
- Stock
- 6,729
- In Stock ：
- 6,729
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 15.75mm
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 55 ns
- Base Part Number :
- STW19N
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Height :
- 20.15mm
- Rise Time :
- 15ns
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 25 ns
- Rds On (Max) @ Id, Vgs :
- 285m Ω @ 6.5A, 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Series :
- Automotive, AEC-Q101, MDmesh™ II
- Package / Case :
- TO-247-3
- Radiation Hardening :
- No
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Continuous Drain Current (ID) :
- 13A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Width :
- 5.15mm
- Power Dissipation-Max :
- 110W Tc
- Turn On Delay Time :
- 12 ns
- Element Configuration :
- Single
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 50V
- Factory Lead Time :
- 16 Weeks
- Datasheets
- STW19NM60N
N-Channel Tube 285m Ω @ 6.5A, 10V ±25V 1000pF @ 50V 35nC @ 10V TO-247-3
STW19NM60N Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1000pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW19NM60N Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
STW19NM60N Applications
There are a lot of STMicroelectronics
STW19NM60N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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