STW19NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Rise Time :

16ns

REACH SVHC :

No SVHC

Turn-Off Delay Time :

61 ns

Radiation Hardening :

No

Pin Count :

3

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

12 ns

Width :

5.15mm

Height :

20.15mm

Power Dissipation-Max :

110W Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 50V

Fall Time (Typ) :

17 ns

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

150°C TJ

Terminal Position :

Single

Threshold Voltage :

3V

Length :

15.75mm

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Number of Pins :

3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

RoHS Status :

ROHS3 Compliant

Power Dissipation :

110W

Rds On (Max) @ Id, Vgs :

250m Ω @ 7A, 10V

Resistance :

250mOhm

Continuous Drain Current (ID) :

14A

Mount :

Through Hole

Base Part Number :

STW19N

Element Configuration :

Dual

Avalanche Energy Rating (Eas) :

208 mJ

Series :

MDmesh™ II

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

56A

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V