STW18NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

68A

Transistor Application :

SWITCHING

Number of Pins :

3

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

295m Ω @ 8.5A, 10V

Turn-Off Delay Time :

96 ns

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

800V

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Factory Lead Time :

16 Weeks

Packaging :

Tube

Drain-source On Resistance-Max :

0.295Ohm

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Turn On Delay Time :

18 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Threshold Voltage :

4V

Lead Free :

Lead Free

Width :

5.15mm

Continuous Drain Current (ID) :

17A

ECCN Code :

EAR99

JESD-609 Code :

e3

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

600 mJ

Vgs (Max) :

±30V

Height :

20.15mm

Mounting Type :

Through Hole

Base Part Number :

STW18N

Series :

MDmesh™

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

50 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

190W

Pin Count :

3

Power Dissipation-Max :

190W Tc

Length :

15.75mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

28ns