STW18N65M5

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Mfr.Part #
STW18N65M5
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 15A TO247
Stock
5,534
In Stock :
5,534

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
15A
Drain to Source Breakdown Voltage :
650V
FET Type :
N-Channel
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
210 mJ
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Radiation Hardening :
No
Element Configuration :
Single
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Gate to Source Voltage (Vgs) :
25V
Mount :
Through Hole
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
60A
Power Dissipation-Max :
110W Tc
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
220m Ω @ 7.5A, 10V
Lead Free :
Lead Free
Number of Elements :
1
Drain-source On Resistance-Max :
0.22Ohm
Rise Time :
7ns
Factory Lead Time :
17 Weeks
Base Part Number :
STW18N
Operating Temperature :
150°C TJ
Series :
MDmesh™ V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
110W
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
9 ns
Vgs (Max) :
±25V
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 250μA
Package / Case :
TO-247-3
Datasheets
STW18N65M5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW18N65M5 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:STW18N, Operating Temperature:150°C TJ, Package / Case:TO-247-3, STW18N65M5 pinout, STW18N65M5 datasheet PDF, STW18N65M5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW18N65M5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW18N65M5


N-Channel Tube 220m Ω @ 7.5A, 10V ±25V 1240pF @ 100V 31nC @ 10V TO-247-3

STW18N65M5 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 210 mJ.A device's maximum input capacitance is 1240pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STW18N65M5 Features


the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
based on its rated peak drain current 60A.


STW18N65M5 Applications


There are a lot of STMicroelectronics
STW18N65M5 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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