STW18N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

ECCN Code :

EAR99

Mount :

Through Hole

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

13A

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

791pF @ 100V

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.28Ohm

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 10V

Power Dissipation-Max :

110W Tc

Avalanche Energy Rating (Eas) :

135 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

52A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Series :

MDmesh™ II Plus

Current - Continuous Drain (Id) @ 25°C :

13A Tc

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Factory Lead Time :

16 Weeks

Base Part Number :

STW18N

RoHS Status :

ROHS3 Compliant