STW17N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Height :

20.15mm

Length :

15.75mm

Number of Elements :

1

Power Dissipation-Max :

190W Tc

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

150°C TJ

Turn On Delay Time :

22 ns

Number of Pins :

3

Width :

5.15mm

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Continuous Drain Current (ID) :

15.5A

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

63 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

620V

Turn-Off Delay Time :

110 ns

REACH SVHC :

No SVHC

Base Part Number :

STW17N

Threshold Voltage :

3.75V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

15.5A Tc

Element Configuration :

Single

FET Type :

N-Channel

Transistor Application :

SWITCHING

Rise Time :

26ns

Transistor Element Material :

SILICON

Mount :

Through Hole

Package / Case :

TO-247-3

Series :

SuperMESH3™

Resistance :

280mOhm

Power Dissipation :

190W

Rds On (Max) @ Id, Vgs :

380m Ω @ 7.5A, 10V

Lead Free :

Lead Free

Pin Count :

3

Additional Feature :

AVALANCHE ENERGY RATED

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Number of Terminations :

3