STW16NM50N
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- Mfr.Part #
- STW16NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO247-3
- Stock
- 3,393
- In Stock ：
- 3,393
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 125W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±25V
- Element Configuration :
- Single
- Terminal Finish :
- MATTE TIN/TIN SILVER COPPER
- Drain to Source Breakdown Voltage :
- 500V
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 470 mJ
- Turn-Off Delay Time :
- 60 ns
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 7.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 125W Tc
- Turn On Delay Time :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Fall Time (Typ) :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 50V
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- JESD-609 Code :
- e3/e1
- Base Part Number :
- STW16N
- Series :
- MDmesh™ II
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 60A
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Drain-source On Resistance-Max :
- 0.26Ohm
- Rise Time :
- 15ns
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 15A
- Package / Case :
- TO-247-3
- Datasheets
- STW16NM50N
N-Channel Tube 260m Ω @ 7.5A, 10V ±25V 1200pF @ 50V 38nC @ 10V TO-247-3
STW16NM50N Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 470 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1200pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STW16NM50N Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 60A.
STW16NM50N Applications
There are a lot of STMicroelectronics
STW16NM50N applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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