STW16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Lead Free :

Lead Free

Vgs (Max) :

±25V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

48A

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Additional Feature :

ULTRA-LOW RESISTANCE

Number of Elements :

1

Element Configuration :

Single

Transistor Element Material :

SILICON

Turn On Delay Time :

25 ns

Number of Terminations :

3

Turn-Off Delay Time :

6 ns

Mount :

Through Hole

Base Part Number :

STW16N

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

200 mJ

Rise Time :

7ns

Series :

MDmesh™ V

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

12A

Radiation Hardening :

No

Packaging :

Tube

Power Dissipation-Max :

90W Tc

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Resistance :

279mOhm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Power Dissipation :

90W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

Drain to Source Breakdown Voltage :

650V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

279m Ω @ 6A, 10V

Package / Case :

TO-247-3

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

5V @ 250μA