STW160N75F3
- Mfr.Part #
- STW160N75F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO247-3
- Stock
- 4,341
- In Stock :
- 4,341
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 100 ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- JEDEC-95 Code :
- TO-247AB
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 60A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6750pF @ 25V
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 330W
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 60A
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 22 ns
- Fall Time (Typ) :
- 15 ns
- Base Part Number :
- STW160
- Vgs (Max) :
- ±20V
- Length :
- 15.75mm
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 75V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Height :
- 20.15mm
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Resistance :
- 4mOhm
- Power Dissipation-Max :
- 330W Tc
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Rise Time :
- 65ns
- Packaging :
- Tube
- Width :
- 5.15mm
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 480A
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Series :
- STripFET™
- Datasheets
- STW160N75F3

N-Channel Tube 4m Ω @ 60A, 10V ±20V 6750pF @ 25V 85nC @ 10V TO-247-3
STW160N75F3 Description
STW160N75F3 is a 75v N-channel STripFET? Power MOSFET. This N-channel enhancement mode Power MOSFET STW160N75F3 is the latest refinement of ST’s STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STW160N75F3 is in the TO-247 package with 330W power dissipation.
STW160N75F3 Features
-
Ultra-low on-resistance
-
100% avalanche tested
-
Drain-source voltage (VGS=0):75V
-
Gate-source voltage: ±20V
-
Drain current (continuous) at TC = 25°C: 120A
STW160N75F3 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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