STW15NM60ND
- Mfr.Part #
- STW15NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO247-3
- Stock
- 6,951
- In Stock :
- 6,951
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 14A
- Number of Terminations :
- 3
- Turn On Delay Time :
- 17 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Series :
- FDmesh™ II
- Height :
- 20.15mm
- Rise Time :
- 20ns
- Package / Case :
- TO-247-3
- Length :
- 15.75mm
- Power Dissipation :
- 125W
- Number of Pins :
- 3
- Resistance :
- 299mOhm
- Mount :
- Through Hole
- Number of Elements :
- 1
- Base Part Number :
- STW15N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- JEDEC-95 Code :
- TO-247AC
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Pulsed Drain Current-Max (IDM) :
- 56A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 50V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 7A, 10V
- Width :
- 5.15mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 47 ns
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 4V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 125W Tc
- Pin Count :
- 3
- Datasheets
- STW15NM60ND

N-Channel Tube 299m Ω @ 7A, 10V ±25V 1250pF @ 50V 40nC @ 10V TO-247-3
STW15NM60ND Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1250pF @ 50V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 47 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
STW15NM60ND Applications
There are a lot of STMicroelectronics
STW15NM60ND applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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