STW15NM60N
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- Mfr.Part #
- STW15NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO247-3
- Stock
- 24,969
- In Stock ：
- 24,969
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 80 ns
- Continuous Drain Current (ID) :
- 14A
- Vgs (Max) :
- ±25V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 56A
- Drain-source On Resistance-Max :
- 0.299Ohm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 125W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 50V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 30 ns
- Mount :
- Through Hole
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STW15N
- Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 7A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Series :
- MDmesh™ II
- Packaging :
- Tube
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Rise Time :
- 14ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Datasheets
- STW15NM60N
N-Channel Tube 299m Ω @ 7A, 10V ±25V 1250pF @ 50V 37nC @ 10V TO-247-3
STW15NM60N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1250pF @ 50V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW15NM60N Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
STW15NM60N Applications
There are a lot of STMicroelectronics
STW15NM60N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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