STW15NB50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Pulsed Drain Current-Max (IDM) :

58.4A

Rds On (Max) @ Id, Vgs :

360m Ω @ 7.5A, 10V

Power Dissipation-Max :

190W Tc

Series :

PowerMESH™

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Number of Elements :

1

JESD-609 Code :

e3

Fall Time (Typ) :

25 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Through Hole

Lead Free :

Contains Lead

Power Dissipation :

190W

Drain-source On Resistance-Max :

0.36ohm

Drain to Source Breakdown Voltage :

500V

Voltage - Rated DC :

500V

Mount :

Through Hole

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

850 mJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Rise Time :

14ns

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED

Base Part Number :

STW15N

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

14.6A

Pin Count :

3

Continuous Drain Current (ID) :

14.6A

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

14.6A Tc

FET Type :

N-Channel

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V